洪銘輝教授 MINGHWEI HONG

論文發表 Publications ( Download All List)

1.            "Research on Monolithic Process of Making A15 Superconducting Materials," M. Hong, D. Dietderich, and J. W. Morris, Jr., Advances in Cryogenic Engineeirng, Vol. 26, 327, 1980.

2.            "Development of A15 (V3Ga) Superconducting Material through Controlled Precipitation," M. Hong, D. Dietderich, and J. W. Morris, Jr., J. Appl. Phys. 51, 2774, 1980.

3.      "Direct Solid-State Precipitation Processed A15 (Nb3Al) Superconducting Material," M. Hong, and J. W. Morris, Jr., Appl. Phys. Lett., 37, 1044, 1980.

4.      "Microstructure and Properties of A15 Superconductors Formed by Direct Precipitation," M. Hong, D. R. Dietderich, I. W. Wu, and J. W. Morris, Jr., IEEE Trans. MAG-17, 278, 1981.

5.        "The Preferred Habit of a Tetragonal Inclusion in a Cubic Matrix," S. H. Wen, E. Kostlan, M. Hong, A. G. Khachaturyan, and J. W. Morris, Jr., Acta Metalllurgica 29, 1247, 1981.

6.        "The Crystallographic Orientaton of A15 V3Ga and Nb3Al Precipitates in BCC Matrices," I. W. Wu, M. Hong, and J. W. Morris, Jr., Appl. Phys. Lett. 39, 110, 1981.

7.      "The Effect of High Compressive Stress on the Critical Current in Multi-Strand Nb3Sn Conductors," W. Hassenzahl, C. Taylor, W. W. Gilbert, M. Hong, D. R. Dietderich, and R. Scanlan, Advances in Cryogenic Engineering (Materials) 28, 663, 1982.

8.      "An Investigation on th Enhancement of the Critical Current Densities in Bronze-Process Nb3Sn," M. Hong, I. W. Wu, J. W. Morris, Jr., C. Taylor, W. V. Hassenzahl, and W. Gilbert, Advances in Cryogenic Engineering (Materials), 28, 435, 1982.

9.     "Superconducting and Metallurgical Properties of A15 Nb3Al Formed by Solid-Liquid Reaction," J. M. Hong, J. T. Holthuis, I. W. Wu, M. Hong, and J. W. Morris, Jr., Advances in Cryogenic Engineering (Materials), 28, 483, 1982.

10.  "Multifilamentary Nb-Nb3Sn Composite by Liquid Infiltration Method: Superconducting Metallurgical and Mechanical Properties," M. Hong, G. W. Hull, Jr., J. T. Holthuis, W. V. Hassenzahl, and J. W. Ekin, IEEE Trans. Magn. MAG-19, 912, 1983.


獲獎專利 Patents ( Download All List)

1. "Apparatus Comprising A Laser Adapted for Emission of Single Mode Radiation Having Low Transverse Divergence", Y. K. Chen, M. Hong, M. C. Wu, Granted, Patent Number 5,088,099, Feb. 11, 1992.

2. "Method of Making a Semiconductor Laser", Y. K. Chen, M. Hong, and M. Wu, Granted, Patent Number 5,208,183, May 4, 1993.

3. "Semiconductor Surface Emitting Laser Having Enhanced Optical Confinement", K. D. Choquette, R. S. Freund, and M. Hong, Granted, Patent Number 5,212,701, May 18, 1993.

4. "Method of Making an Article Comprising a Periodic Heteroepitaxial Semiconductor Structure", Y. K. Chen, M. Hong, J. P. Mannaerts, and M. Wu, Granted, Patent Number 5,213,995, May 25, 1993.

5. "Process for Removing Surface Contaminants from III-V Semiconductors", K. D. Choquette, R. S. Freund, M. Hong, and J. P. Mannaerts, Granted, Patent Number 5,275,687, January 4, 1994.

6. "Semiconductor Surface Emitting Laser Having Enhanced Optical Confinement", K. D. Choquette, R. S. Freund, and M. Hong, Granted, Patent Number 5,348,912, September 20, 1994.

7. "Vertical Cavity Semiconductor Laser", K. D. Choquette, R. S. Freund, M. Hong, and D. Vakhshoori, Granted, Patent Number 5,559,053, September 24, 1996.

8. "Article Comprising Ex-situ Deposited Oxide on GaAs-Based III-V Semiconductor", M. Hong (IDS number 111182, submitted by E. E. Pacher on 4/3/1996 for open patentability submissions.)

9. "Article Comprising A Gallium Oxide Layer On A GaAs-Based Semiconductor, And Method of Making the Article", M. Hong, J. Kwo, J. P. Mannaerts, M. Passlack, F. Ren, G. J. Zydzik, Granted, Patent Number 5,821,171, October 13, 1998. Filed Mar.22, 1995 (Application No. 408,678).

10. "GaAs-Based MOSFET, and Method of Making Same", A. Y. Cho, M. Hong, J. R. Lothian, J. P. Mannaerts, and F. Ren, Granted, patent number 5,903,037, May 11, 1999.

11. “Article comprising an oxide layer on GaN, and method of making the article”, W. Hobson, M. Hong, J. R. Lothian, J. P. Mannaerts, F. Ren, Granted, Patent Number 5,912,498, June 15, 1999.

12. “Article comprising an oxide layer on a GaAs-based semiconductor body, and method of making the article”, M. Hong, J. Kwo, and D. W. Murphy, Granted, Patent Number 5,962,883, Oct. 5, 1999.

13. "Method of Making An Article Comprising An Oxide Layer On A GaAs-Based Semiconductor Body", Y. K. Chen, A. Y. Cho, W. S. Hobson, M. Hong, J. M. Kuo, J. R. Kwo, D. W. Murphy, and F. Ren, granted, U.S. Patent Number 6271069, Aug. 7, 2001.

14. “High dielectric constant gate oxides for Silicon-based devices”, M. Hong, A. R. Kortan, J. R. Kwo, and J. P. Mannaerts, granted, U.S. Patent Number 6404027, June 11, 2002.

15. "Article Comprising An Oxide Layer On A GaAs or GaN-Based Semiconductor Body", M. Hong, A. R. Kortan, J. Kwo, and J. P. Mannaerts, granted, U.S. Patent Number 6469357, Oct. 22, 2002.

16. “Method of making an article comprising an oxide layer on a GaAs-based semiconductor body”, M. Hong, J. M. Kuo, J. Kwo, J. P. Mannaerts, and Y. C. Wang, granted, U.S. Patent Number 6495407, Dec. 17, 2002.