Multi-chamber ultra high vacuum system , which includes a solid source GaAs-based III-V semiconductor molecular beam epitaxy chamber , two arsenic-free

UHV oxide and metal deposition chamber , one Si-Ge MBE chamber , and UHV wafer transfer modules.

Academic and Technological Achievements and Technical Ability

1. First to demonstrate inversion channel III-V MOSFET , which opens possibility for next generation high speed , high power electronic devices

2. First to achieve atomic-sharp interface in high-k dielectrics on

Silican (the most urgent research topic in Si industry)

3. Novel epitaxy which produces new material , novel physics , and high performance nano-devices

The Most Advanced versatile MBE laboratory

Growth of very-thin materials ranging from semiconductors , metals , to insulators and the heterostructures of the above constituents